JAN1N4150-1 Is In Stock And Available For Purchase!

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Use the form below to request a quote and a sales representative will contact you shortly wirh a response. If you have a parts list you can email your list to sales@slc-semiconductors.com, or call Toll Free 800-560-9119 to speak to a sales associate now.

  Part Number Quantity MFG Code Date Code Type Order Qty
 

JAN1N4150-1

10000 BKC International Electronics 9128 Diodes
 

JAN1N4150-1

3784 BKC International Electronics 9116 Diodes
 

JAN1N4150-1

7961 BKC International Electronics 9118 Diodes
 

JAN1N4150-1

4988 BKC International Electronics 9111 Diodes
 

JAN1N4150-1

5959 BKC International Electronics 9108 Diodes

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Instructions

JAN1N4150-1
 

Addtional Information for JAN1N4150-1


Part Number: JAN1N4150-1
Description: Silicon Switching Diode
Manufacturer: BKC International Electronics

MAXIMUM RATINGS:
Peak Inverse Voltage: 75V
Working Inverse Voltage: 50V
Average Rectified Current: 200 mA
Continuous Forward Current: 400 mA
Peak Surge Current (pulse width 1 Sec): 0.5 A
Maximum Power Dissipation: 500 mW
Operating Temperature: -65 Degree Celsius to +175 Degree Celsius
Storage Temperature: -65 Degree Celsius to +200 Degree Celsius

TYPICAL ELECTRICAL CHARACTERISTICS:
VF1 1 mA Vdc: 0.54-0.62
VF2 10 mA Vdc: 0.66-0.74
VF3 50 mA Vdc: 0.76-0.86
VF4 100 mA Vdc: 0.82-0.92
VF5 200 mA Vdc: 0.87-1.0
IR1 50 V nA: 100
IR2 @ 150 Degree Celsius 50 V uA: 100
Cap 0 V Pf: 2.5
Trr * nS: 4.0
Trr ** nS: 6.0
Tfr *** nS: 10

* Per Method 4031-B of MIL-STD-750 with IF = 10 to 200 mA, RL = 100 Ohms.
** Per Method 4031-B of MIL-STD-750 with IF = 200 to 400 mA, RL = 100 Ohms.
*** Per Method 4026 of MIL-STD-750 with IF = 200 mA, Tr = 0.4 nS.

JAN1N4150-1 In Stock and Ready to Ship!

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JAN1N4150-1
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